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Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Identifieur interne : 003A99 ( Main/Repository ); précédent : 003A98; suivant : 003B00

Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Auteurs : RBID : Pascal:10-0414926

Descripteurs français

Pascal (Inist)
- Champ électrique, Hétérostructure, Composé binaire, Semiconducteur III-V, Gallium Nitrure, Composé ternaire, Gallium Arséniure, Indium Arséniure, Matériau optique, Gallium nitrure, Plasmon, Nitrure, Transistor effet champ, GaInAs, Ga N, As Ga In, GaN, InGaAs, 0130C, 4270N.

English descriptors

KwdEn :
- Binary compounds, Electric fields, Field effect transistors, Gallium Arsenides, Gallium Nitrides, Gallium nitrides, Heterostructures, III-V semiconductors, Indium Arsenides, Nitrides, Optical materials, Plasmons, Ternary compounds.

Abstract

A bottleneck for heat dissipation is discussed in terms of plasmon-assisted decay of nonequilibrium longitudinal optical phonons launched by hot electrons. According to experiment at low and moderate electric fields, the fastest decay takes place at electron density of ˜6.7 × 10¹² cm^-2 and ˜2.7 × 10¹² cm^-2 for heterostructures with 2DEG channels located in GaN and GaInAs, respectively. Hot-electron temperature and gate voltage can be used to shift the optimal density. A GaN-based heterostructure field effect transistor degrades slower when dissipation of the LO-mode heat is faster.

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Pascal:10-0414926

Le document en format XML

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<author><name sortKey="Matulionis, Arvydas" uniqKey="Matulionis A">Arvydas Matulionis</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Fluctuation Research Laboratory, Semiconductor Physics Institute</s1>
<s2>Vilnius, 01108</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>Vilnius, 01108</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Liberis, Juozapas" uniqKey="Liberis J">Juozapas Liberis</name>
<affiliation wicri:level="1"><inist:fA14 i1="01"><s1>Fluctuation Research Laboratory, Semiconductor Physics Institute</s1>
<s2>Vilnius, 01108</s2>
<s3>LTU</s3>
<sZ>1 aut.</sZ>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Lituanie</country>
<wicri:noRegion>Vilnius, 01108</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Morkoc, Hadis" uniqKey="Morkoc H">Hadis Morkoc</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Department of Electrical and Computer Engineering and Physics Department, Virginia Commonwealth University</s1>
<s2>Richmond, Virginia 23284</s2>
<s3>USA</s3>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>États-Unis</country>
<wicri:noRegion>Richmond, Virginia 23284</wicri:noRegion>
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<publicationStmt><idno type="inist">10-0414926</idno>
<date when="2010">2010</date>
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<term>Electric fields</term>
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<term>Gallium Arsenides</term>
<term>Gallium Nitrides</term>
<term>Gallium nitrides</term>
<term>Heterostructures</term>
<term>III-V semiconductors</term>
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<keywords scheme="Pascal" xml:lang="fr"><term>Champ électrique</term>
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<front><div type="abstract" xml:lang="en">A bottleneck for heat dissipation is discussed in terms of plasmon-assisted decay of nonequilibrium longitudinal optical phonons launched by hot electrons. According to experiment at low and moderate electric fields, the fastest decay takes place at electron density of ˜6.7 × 10<sup>12</sup>
 cm<sup>-2</sup>
 and ˜2.7 × 10<sup>12</sup>
 cm<sup>-2</sup>
 for heterostructures with 2DEG channels located in GaN and GaInAs, respectively. Hot-electron temperature and gate voltage can be used to shift the optimal density. A GaN-based heterostructure field effect transistor degrades slower when dissipation of the LO-mode heat is faster.</div>
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<fC01 i1="01" l="ENG"><s0>A bottleneck for heat dissipation is discussed in terms of plasmon-assisted decay of nonequilibrium longitudinal optical phonons launched by hot electrons. According to experiment at low and moderate electric fields, the fastest decay takes place at electron density of ˜6.7 × 10<sup>12</sup>
 cm<sup>-2</sup>
 and ˜2.7 × 10<sup>12</sup>
 cm<sup>-2</sup>
 for heterostructures with 2DEG channels located in GaN and GaInAs, respectively. Hot-electron temperature and gate voltage can be used to shift the optimal density. A GaN-based heterostructure field effect transistor degrades slower when dissipation of the LO-mode heat is faster.</s0>
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Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Plasmon-assisted dissipation of LO-mode heat in nitride 2DEG channels

Descripteurs français

English descriptors

Abstract

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Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

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